Samsung Electronics today revealed that it has begun sampling the first 16-gigabit Graphics Double Data Rate 6 DRAM with 24 Gbps processing speeds. It is built on the 10 nm EUV process technology and is expected to improve the performance of laptop and console GPUs.
The new DRAM chip will provide universal compatibility so that it can be widely used in the market by graphics unit manufacturers.
Samsung GDDR6 DRAM
Suwon engineers, Samsung HQ, developed an innovative circuit design and a highly advanced insulation material called High-K Metal Gate or HKMG to minimize data leakage. This means that the GDDR6 DRAM will offer 30% faster speeds than its predecessor.
Samsung’s new GDRR6 range also offers some energy-efficient options for longer battery life on laptops. It uses dynamic voltage switching technology that adapts to the performance requirements. The company will launch versions with processing speeds of 20 Gbps and 16 Gbps running at 1.1 V instead of the 1.35 V industry standard.
Samsung GDDR6 DRAM
Daniel Lee, Executive VP of Memory Product Planning Team at Samsung, revealed that the reason for such fast processing speeds is “the explosion” of data processing needs powered by AI and metaverse. The company is currently sampling the new platform, meaning it is still being verified in real-life scenarios so it can hit the market “in line with the launch of the GPU platform”.